| PART |
Description |
Maker |
| TP65H050WS |
650V Cascode GaN FET in TO-247
|
Transphorm Inc
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| BGA416 |
RF Cascode Amplifier
|
Infineon Technologies A...
|
| BFC520 |
NPN wideband cascode transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| MRFIC0916 |
SILICON GENERAL PURPOSE RF CASCODE AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| AAT2491IAN-T1 |
Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array
|
Skyworks Solutions
|
| 2SK3337-01 |
N-CHANNEL SILICON POWER MOS-FET 7 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
FUJI ELECTRIC CO LTD
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| SBR4060PT |
RECTIFIER SBR DUAL 40A 60V 280A-ifsm 700mV-vf 0.5mA-ir TO-247 50/TUBE 40 A, 60 V, SILICON, RECTIFIER DIODE, TO-247
Super barrier rectifier
|
Diodes, Inc.
ETC
List of Unclassifed Manufacturers
|
| STW16NA40 STW16NA40FI STH16NA40 STH16NA40FI W16NA4 |
N-Channel 400V-0.21Ω-16A - TO-247/ISOWATT218 Power MOS Transistors(Ｎ沟道功率ＭＯＳ晶体 N沟道400V -0.21Ω- 16A TO-247/ISOWATT218功率MOS晶体管（不适用马鞍山沟道功率晶体管
N - CHANNEL 400V - 0.21W - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
From old datasheet system
N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STH10NC60FI STW10NC60 STH10NC60 |
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?┥I MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?II MOSFET
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMeshII MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL Power MOS MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET N沟道600V 0.6ohm - 10A TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
|
